View 2sc3808 datasheet:

Ordering number:EN2105A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · Low frequency general-purpose amplifiers, drivers. unit:mm 2043A Features [2SC3808] · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)? 0.5V). · High VEBO (VEBO? 15V). B : Base C : Collector E : Emitter SANYO : TO-126LP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 80 V Collector-to-Emitter Voltage VCEO 60 V Emitter-to-Base Voltage VEBO 15 V Collector Current IC 2 A Collector Current (Pulse) ICP 4 A Collect