View 2sc3811 e datasheet:

Transistor 2SC3811 Silicon NPN epitaxial planer type For high speed switching Unit: mm 5.0± 0.2 4.0± 0.2 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 40 V 0.45 –0.1 0.45 –0.1 Collector to emitter voltage VCES 40 V 1.27 1.27 Emitter to base voltage VEBO 5 V Peak collector current ICP 300 mA 1 2 3 1:Emitter Collector current IC 100 mA 2:Base 3:Collector Collector power dissipation PC 400 mW 2.54± 0.15 JEDEC:TO–92 Junction temperature Tj 150 ?C EIAJ:SC–43A Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 40V, IE