View 2sc3820 datasheet:

Ordering number:EN2544B NPN Epitaxial Planar Type Silicon Transistor 2SC3820 High hFE, AF Amplifier Applications Applications Package Dimensions · Drivers, muting circuits. unit:mm 2033 Features [2SC3820] · Adoption of FBET and MBIT processes. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)? 0.5V). · High VEBO (VEBO? 15V). · Small Cob (Cob=2.0pF typ). B : Base C : Collector E : Emitter SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 15 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Collector Dissipation PC 300 mW Junction Tempera