View 2sc3829 e datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Transistor 2SC3829 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65± 0.15 1.5 0.05 0.65± 0.15 Features Low noise figure NF. High gain. 1 High transition frequency fT. 3 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 0.4± 0.2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V 1:Base JEDEC:TO236 Emitter to base voltage VEBO 2 V 2:Emitter EIAJ:SC59 3:Collector Mini Type Package Collector current IC 80 mA Collector power dissipation PC 200 mW Marking symbol : 3M Junction temperature Tj 150 ?C Storage temperature Tstg 55
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2sc3829 e Datasheet, Design, MOSFET, Power
2sc3829 e RoHS, Compliant, Service, Triacs, Semiconductor
2sc3829 e Database, Innovation, IC, Electricity
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