View 2sc3896 datasheet:

Ordering number:EN4097 NPN Triple Diffused Planar Silicon Transistor 2SC3896 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions · High speed (tf=100ns typ). unit:mm · High reliability (Adoption of HVP process). 2039D · High breakdown voltage (VCBO=1500V). [2SC3896] · Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 8 A Collector Current (Pulse) ICP 25 A Collector Dissipation PC 3.0 W Tc=25?C 70 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 t