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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc4030

Ordering number:EN2477B NPN Triple Diffused Planar Silicon Transistor 2SC4030 900V/50mA Switching Applications Features Package Dimensions · High breakdown voltage (VCEO min=900V). unit:mm · Small Output Capacitance (Cob typ=2.0pF). 2049C · Wide ASO (adoption of MBIT process). [2SC4030] · High reliability (adoption of HVP process). 10.2 4.5 1.3 1.2 0.8 0.4 1 2 3 1 : Base 2 : Collector 3 : Emitter 2.55 2.55 SANYO : TO-220MF Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1700 V Collector-to-Emitter Voltage VCEO 900 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 50 mA Collector Current (Pulse) ICP 150 mA Collector Dissipation PC 1.65 W 1.2 W Tc=25?C Junction Temperatur

Keywords

 2sc4030 Datasheet, Design, MOSFET, Power

 2sc4030 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc4030 Database, Innovation, IC, Electricity

 

 
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