View 2sc4104 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features Package Dimensions · High fT. unit:mm · Small reverse transfer capacitance. 2018A · Adoption of FBET process. [2SA1580/2SC4104] C : Collector B : Base E : Emitter ( ) : 2SA1580 SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)70 V Collector-to-Emitter Voltage VCEO (–)60 V Emitter-to-Base Voltage VEBO (–)4 V Collector Current IC (–)50 mA Collector Current (Pulse) ICP (–)100 mA Collector Dissipation PC 200 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symb
Keywords
2sc4104 Datasheet, Design, MOSFET, Power
2sc4104 RoHS, Compliant, Service, Triacs, Semiconductor
2sc4104 Database, Innovation, IC, Electricity
