View 2sc4117 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C • High h h = 200~700 FE: FE • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1587 • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 20 mA JEDEC ? Collector power dissipation PC 100 mW JEITA SC-70 Junction temperature Tj 125 °C TOSHIBA 2-2E1A Storage temperature range Tstg -55~125 °C Weight: 0.006 g (typ.) Elect
Keywords
2sc4117 Datasheet, Design, MOSFET, Power
2sc4117 RoHS, Compliant, Service, Triacs, Semiconductor
2sc4117 Database, Innovation, IC, Electricity
