View 2sc4118 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4118 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • Complementary to 2SA1588 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C JEDEC ? Storage temperature range Tstg -55~125 °C JEITA SC-70 TOSHIBA 2-2E1A Marking Weight: 0.006 g (typ.) 1 2003-03-27 2SC4118 Electrical Characteristics (Ta = = 25°C) =
Keywords
2sc4118 Datasheet, Design, MOSFET, Power
2sc4118 RoHS, Compliant, Service, Triacs, Semiconductor
2sc4118 Database, Innovation, IC, Electricity
