View 2sc4123 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN2956 NPN Triple Diffused Planar Silicon Transistor 2SC4123 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions · High speed (tf=100ns typ). unit:mm · High breakdown voltage (VCBO=1500V). 2039D · High reliability (Adoption of HVP process). [2SC4123] · Adoption of MBIT process. 16.0 5.6 3.4 · On-chip damper diode. 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 7 A Collector Current (Pulse) ICP 16 A Collector Dissipation
Keywords
2sc4123 Datasheet, Design, MOSFET, Power
2sc4123 RoHS, Compliant, Service, Triacs, Semiconductor
2sc4123 Database, Innovation, IC, Electricity
