View 2sc4168 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN2479A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Features Package Dimensions · Fast switching speed. unit:mm · High gain-bandwidth product. 2018A · Low saturation voltage. [2SA1607/2SC4168] C : Collector B : Base E : Emitter ( ) : 2SA1607 SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)40 V Collector-to-Emitter Voltage VCEO (–)20 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)150 mA Collector Current (Pulse) ICP (–)300 mA Base Current IB (–)30 mA Collector Dissipation PC 200 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C
Keywords
2sc4168 Datasheet, Design, MOSFET, Power
2sc4168 RoHS, Compliant, Service, Triacs, Semiconductor
2sc4168 Database, Innovation, IC, Electricity
