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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc4188

Ordering number:EN2557B NPN Epitaxial Planar Silicon Transistor 2SC4188 Ultrahigh-Definition CRT Display Video Output Applications Features Package Dimensions · High breakdown voltage : VCEO? 200V. unit:mm · Small reverse transfer capacitance and excellent high 2010C frequency characteristic : Cre=1.3pF typ. [2SC4188] · Adoption of FBET process. JEDEC : TO220AB 1 : Base EIAJ : SC46 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 200 V Collecor-to-Emitter Voltage VCEO 200 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 100 mA Collector Current (Pulse) ICP 200 mA Collector Dissipation PC 1.5 W Tc=25?C 10 W Junction Tempreature Tj 150 ?C Storage temperat

Keywords

 2sc4188 Datasheet, Design, MOSFET, Power

 2sc4188 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc4188 Database, Innovation, IC, Electricity

 

 
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