View 2sc4487 datasheet:

Ordering number:EN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions · Adoption of FBET, MBIT processes. unit:mm · Large current capacity, wide ASO. 2064 · Low collector-to-emitter saturation voltage. [2SA1707/2SC4487] · Fast switching speed. E : Emitter C : Collector B : Base ( ) : 2SA1707 SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)60 V Collector-to-Emitter Voltage VCEO (–)50 V Emitter-to-Base Voltage VEBO (–)6 V Collector Current IC (–)3 A Collector Current (Pulse) ICP (–)6 A Collector Dissipation PC 1 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrica