View 2sc4488 datasheet:

Ordering number:EN3094 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1708/2SC4488 High-Voltage Switching Applications Features Package Dimensions · Adoption of FBET, MBIT processes. unit:mm · High breakdown voltage, large current capacity. 2064 · Fast switching speed. [2SA1708/2SC4488] E : Emitter C : Collector B : Base ( ) : 2SA1708 SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)120 V Collector-to-Emitter Voltage VCEO (–)100 V Emitter-to-Base Voltage VEBO (–)6 V Collector Current IC (–)1 A Collector Current (Pulse) ICP (–)2 A Collector Dissipation PC 1 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C R