View 2sc4490 datasheet:

Ordering number:EN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions · High breakdown voltage (VCEO? 300V). unit:mm · Excellent high frequency characteristic. 2064 · Adoption of MBIT process. [2SA1710/2SC4490] E : Emitter C : Collector B : Base ( ) : 2SA1710 SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)300 V Collector-to-Emitter Voltage VCEO (–)300 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)100 mA Collector Current (Pulse) ICP (–)200 mA Collector Dissipation PC 1 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 Electrical Char