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2sc4493

Ordering number:EN3099 NPN Triple Diffused Planar Silicon Transistor 2SC4493 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions · High breakdown voltage. unit:mm · Small Cob. 2049C · High reliability (Adoption of HVP process). [2SC4493] · Intended for high-density mounting (Suitable for sets 10.2 4.5 1.3 whose height is restricted). 1.2 0.8 0.4 1 2 3 1 : Base 2 : Collector 3 : Emitter 2.55 2.55 SANYO : TO-220MF Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 800 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 20 mA Collector Current (Pulse) ICP 60 mA Collector Dissipation PC 1.65 W Junction T

Keywords

 2sc4493 Datasheet, Design, MOSFET, Power

 2sc4493 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc4493 Database, Innovation, IC, Electricity

 

 
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