View 2sc4606 e datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Transistor 2SC4606 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit: mm Complementary to 2SA1762 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone fixing to the printed circuit board. 0.55± 0.1 0.45± 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V 2.5 2.5 Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V 1:Base 2:Collector EIAJ:SC–71 Peak collector current ICP 1 A 3:Emitter M Type Mold Package Collector current IC 0.5 A Collector power dissipat
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2sc4606 e Datasheet, Design, MOSFET, Power
2sc4606 e RoHS, Compliant, Service, Triacs, Semiconductor
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