View 2sc4614 datasheet:

Ordering number:EN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features Package Dimensions · Adoption of MBIT process. unit:mm · High breakdown voltage and large current capacity. 2064 [2SA1770/2SC4614] E : Emitter C : Collector B : Base ( ) : 2SA1770 SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)180 V Collector-to-Emitter Voltage VCEO (–)160 V Emitter-to-Base Voltage VEBO (–)6 V Collector Current IC (–)1.5 A Colletor Current (Pulse) ICP (–)2.5 A Collector Dissipation PC 1 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Con