View 2sc4617rev0 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2SC4617/D Preliminary Information 2SC4617 NPN Silicon General Purpose Amplifier Transistor NPN GENERAL This NPN transistor is designed for general purpose amplifier applications. PURPOSE AMPLIFIER This device is housed in the SOT-416/SC–90 package which is designed for TRANSISTORS low power surface mount applications, where board space is at a premium. SURFACE MOUNT • Reduces Board Space • High hFE, 210–460 (typical) • Low VCE(sat), < 0.5 V • Available in 8 mm, 7-inch/3000 Unit Tape and Reel 3 2 MAXIMUM RATINGS (TA = 25°C) 1 Rating Symbol Value Unit CASE 463–01, STYLE 1 Collector-Base Voltage V(BR)CBO 50 Vdc SOT–416/SC–90 Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 5.0 Vdc Co
Keywords
2sc4617rev0 Datasheet, Design, MOSFET, Power
2sc4617rev0 RoHS, Compliant, Service, Triacs, Semiconductor
2sc4617rev0 Database, Innovation, IC, Electricity
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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