View 2sc5018 e datasheet:

Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 2.5± 0.1 1.05 6.9± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.45–0.05 2.5± 0.5 2.5± 0.5 Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V Note: In addition to the 1:Emitter lead type shown in 2:Collector Peak collector current ICP 1.5 A the upper figure, the 3:Base Collector current IC 0.8 A type as shown in MT2 Type Package the lower figure is Collector power dissipation PC* 1 W also available. Junction temperature Tj 150 ?C Sto