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View 2sc5019 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5019_e

Transistor 2SC5019 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 1.5± 0.1 4.5± 0.1 1.6± 0.2 Features Low noise figure NF. High gain. 45° High transition frequency fT. Mini Power type package, allowing downsizing of the equipment 0.4± 0.08 and automatic insertion through the tape packing and the maga- 0.4± 0.04 0.5± 0.08 zine packing. 1.5± 0.1 3.0± 0.15 3 2 1 Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V 1:Base Emitter to base voltage VEBO 2 V 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package Collector current IC 80 mA Collector power dissipation PC* 1 W Marking symbol : W Junction temperature Tj 150 ?C Storage temper

Keywords

 2sc5019 e Datasheet, Design, MOSFET, Power

 2sc5019 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5019 e Database, Innovation, IC, Electricity

 

 
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