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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5065

2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA SC-70 TOSHIBA 2-3E1A Weight: 0.006 g (typ.) Microwave Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 5 V, IC = 10 mA 5 7 ? GHz ?S21e?2 (1) VCE

Keywords

 2sc5065 Datasheet, Design, MOSFET, Power

 2sc5065 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5065 Database, Innovation, IC, Electricity

 

 
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