View 2sc5069 datasheet:

Ordering number:EN4509 NPN Epitaxial Planar Silicon Transistor 2SC5069 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions · High current capacity. unit:mm · Adoption of MBIT process. 2038A · High DC current gain. [2SC5069] · Low collector-to-emitter saturation voltage. 4.5 · High VEBO. 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V Collector-to-Emitter Voltage VCEO 25 V Emitter-to-Base Voltage VEBO 15 V Collector Current IC 2 A Collector Current (Pulse) ICP 4 A Base Current IB 0.4 A Collector Dissipation PC Mounted on ceramic board