View 2sc5070 datasheet:

Ordering number:EN4473 NPN Epitaxial Planar Silicon Transistor 2SC5070 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions · High current capacity. unit:mm · Adoption of MBIT process. 2084A · High DC current gain. [2SC5070] · Low collector-to-emitter saturation voltage. 4.5 1.9 2.6 10.5 · High VEBO. 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 : Emitter 2 : Collector 3 : Base 2.5 2.5 SANYO : FLP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V Collector-to-Emitter Voltage VCEO 25 V Emitter-to-Base Voltage VEBO 15 V Collector Current IC 2 A Collector Current (Pulse) ICP 4 A Base Current IB 0.4 A Collector Dissipation PC 1.5 W Junction Temperatur