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View 2sc5216 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5216_e

Transistor 2SC5216 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm +0.2 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 0.4± 0.2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 3 V 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 Collector current IC 50 mA 3:Collector Mini Type Package Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Marking symbol : FB Storage temperature Tstg –55 ~ +150 ?C Electric

Keywords

 2sc5216 e Datasheet, Design, MOSFET, Power

 2sc5216 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5216 e Database, Innovation, IC, Electricity

 

 
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