View 2sc5255 datasheet:

2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure: NF = 1.5dB (f = 2 GHz) • High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1.5 V Collector current IC 40 mA Base current IB 20 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA ? TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Microwave Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 5 V, IC = 20 mA 9 12 ? GHz ?S21e?2 (1)