View 2sc5264 datasheet:

Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions · High breakdown voltage (VCBO=1000V). unit:mm · High reliability (Adoption of HVP process). 2079C · Adoption of MBIT process. [2SC5264] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 : Base 1 2 3 2 : Collector 3 : Emitter 2.55 2.55 SANYO : TO-220FI-LS Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-Emitter Voltage VCEO 450 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 5 A Collector Current (Pulse) ICP 10 A 2 W Collector Dissipation PC Tc=25?C 30 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150