View 2sc5303 datasheet:

Ordering number:ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions · High speed (tf=100ns typ). unit:mm · High breakdown voltage (VCBO=1500V). 2111A · High reliability (Adoption of HVP process). [2SC5303] · Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1.2 0.6 1 2 3 1 : Base 3.1 5.45 5.45 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3JML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 25 A Collector Current (Pulse) ICP 50 A Collector Dissipation PC 4.6 W Tc=2