View 2sc5304 datasheet:

Ordering number:EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions · High breakdown voltage (VCBO=1000V). unit:mm · High reliability (Adoption of HVP process). 2079B · Adoption of MBIT process. [2SC5304] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1:Base 1 2 3 2:Collector 3:Emitter 2.55 2.55 SANYO:TO-220FI (LS) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-Emitter Voltage VCEO 450 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 7 A Collector Current (pulse) ICP 14 A Collector Dissipation PC 2 W Tc=25?C 35 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical