View 2sc5305ls datasheet:

Ordering number:ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features Package Dimensions � High breakdown voltage (VCBO=1200V). unit:mm � High reliability (Adoption of HVP process). 2079D � Adoption of MBIT process. [2SC5305] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1:Base 1 2 3 2:Collector 3:Emitter Specifications 2.55 2.55 SANYO:TO-220FI (LS) Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1200 V Collector-to-Emitter Voltage VCEO 600 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 6 A Collector Current (pulse) ICP 12 A 2 W Collector Dissipation PC 35 W Tc=25?C Junction Temperature Tj 150 ?C Storage Temperature Tstg �55 to +150 ?C