View 2sc5322ft datasheet:

2SC5322FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure: NF = 1.4dB (f = 2 GHz) • High gain: |S |2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5 V Collector current IC 10 mA Base current IB 5 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA ? TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Microwave Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 3 V, IC = 7 mA 9 ? ? GHz ?S21e?