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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5335_e

Transistor 2SC5335(Tentative) Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 2.5± 0.1 1.05 6.9± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.45–0.05 2.5± 0.5 2.5± 0.5 Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 15 V Note: In addition to the 1:Emitter lead type shown in 2:Collector Peak collector current ICP 1.5 A the upper figure, the 3:Base Collector current IC 0.7 A type as shown in MT2 Type Package the lower figure is Collector power dissipation PC*1 1.0 W also available. Junction tempera

Keywords

 2sc5335 e Datasheet, Design, MOSFET, Power

 2sc5335 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5335 e Database, Innovation, IC, Electricity

 

 
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