View 2sc5346 e datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Transistor 2SC5346 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SA1982 2.5± 0.1 1.05 6.9± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. 0.65 max. Small collector output capacitance Cob. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.45–0.05 2.5± 0.5 2.5± 0.5 Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 5 V Note: In addition to the 1:Emitter lead type shown in 2:Collector Peak collector current ICP 100 mA the upper figure, the 3:Base Collector current IC 50 mA type as shown in MT2 Type Package the lower figu
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2sc5346 e Datasheet, Design, MOSFET, Power
2sc5346 e RoHS, Compliant, Service, Triacs, Semiconductor
2sc5346 e Database, Innovation, IC, Electricity
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