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2sc5355

2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs (max), t = 0.3 µs (max) f • High collector breakdown voltage: V = 400 V CEO • High DC current gain: h = 20 (min) FE Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 5 JEDEC ? Collector current A Pulse ICP 7 JEITA ? Base current IB 1 A TOSHIBA 2-7B5A Ta = 25°C 1.5 Collector power Weight: 0.36 g (typ.) PC W dissipation Tc = 25°C 25 Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C

Keywords

 2sc5355 Datasheet, Design, MOSFET, Power

 2sc5355 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5355 Database, Innovation, IC, Electricity

 

 
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