View 2sc5356 datasheet:

2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs (max) (I = 1.2 A) C • High collectors breakdown voltage: V = 800 V CEO • High DC current gain: h = 15 (min) (I = 0.15 A) FE C Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 7 V DC IC 3 JEDEC ? Collector current A Pulse ICP 5 JEITA ? Base current IB 1 A TOSHIBA 2-7B5A Ta = 25°C 1.5 Collector power Weight: 0.36 g (typ.) PC W dissipation Tc = 25°C 25 Junction temperature Tj 150 °C Storage temperature rang