Transistor 2SC5363(Tentative) Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6± 0.15 0.4 0.8± 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.2± 0.1 Collector to base voltage VCBO 9 V Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 2 V 1:Base 2:Emitter EIAJ:SC–75 Collector current IC 30 mA 3:Collector SS–Mini Type Package Collector power dissipation PC 125 mW Junction temperature Tj 125 ?C Marking symbol : 3Y Storage temperature Tstg –55 ~ +125 ?C Electrical Characteristics (Ta=25?C)