View 2sc5376 datasheet:

2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications • Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B • High collector current: I = 400 mA (max) C Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 400 mA Base current IB 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C JEDEC ? Storage temperature range Tstg -55~125 °C JEITA ? TOSHIBA 2-2H1A Marking Weight: 2.4 mg (typ.) 1 2003-03-27 2SC5376 Electrical Characteristics (Ta = = 25°C