View 2sc5376f datasheet:

2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications • Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B • High Collector Current: I = 400 mA (max) C Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 400 mA Base current IB 50 mA Collector power dissipation PC 100 mW JEDEC ? Junction temperature Tj 125 °C JEITA ? Storage temperature range Tstg -55 to 125 °C TOSHIBA 2-2HA1A Marking Equivalent Circuit (top view) Type Name hFE Classification F A 1 2002-01-16