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View 2sc5379 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5379_e

Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6± 0.15 0.4 0.8± 0.1 0.4 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25?C) 0.2± 0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8 V 1:Base Emitter to base voltage VEBO 2 V 2:Emitter EIAJ:SC–75 3:Collector SS–Mini Type Package Collector current IC 80 mA Collector power dissipation PC 125 mW Marking symbol : HT Junction temperature Tj 125 ?C Storage temperature Tstg –55 ~ +125 ?C Electrical Characteristics (Ta=25?C) Paramet

Keywords

 2sc5379 e Datasheet, Design, MOSFET, Power

 2sc5379 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5379 e Database, Innovation, IC, Electricity

 

 
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