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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5380

Power Transistors 2SC5380, 2SC5380A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5± 0.5 3.0± 0.3 ? 3.2± 0.1 Features 5° 5° High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5° Wide area of safe operation (ASO) 5° 4.0 5° 2.0± 0.2 1.1± 0.1 Absolute Maximum Ratings (TC=25?C) 0.7± 0.1 Parameter Symbol Ratings Unit 5.45± 0.3 5.45± 0.3 Collector to base voltage VCBO 1500 V VCES 1500 V 5° Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 5 V 1 2 3 1:Base Peak collector current ICP 20 A 2:Collector 3:Emitter Collector current IC 16 A TOP–3E Full Pack Package Base current IB 8 A Collector power TC=25° C 100 PC W dissipation Ta=25° C 3.5 Juncti

Keywords

 2sc5380 Datasheet, Design, MOSFET, Power

 2sc5380 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5380 Database, Innovation, IC, Electricity

 

 
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