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2sc5502

Ordering number:ENN6279 NPN Epitaxial Planar Silicon Transistor 2SC5502 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.1dB typ (f=1GHz). unit:mm 2 · High gain : ? S21e? =12dB typ (f=1GHz). 2161 · High cutoff frequency : fT=8GHz typ. [2SC5502] 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 100 mA Collector Dissipation PC Mounted on a ceramic board (250mm2? 0.8mm) 500 mW Junction Temperature Tj 150 ?C Storage Temperature

Keywords

 2sc5502 Datasheet, Design, MOSFET, Power

 2sc5502 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5502 Database, Innovation, IC, Electricity

 

 
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