View 2sc5503 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:ENN6222 NPN Epitaxial Planar Silicon Transistor 2SC5503 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions · Low noise : NF=1.2dB typ (f=1GHz). unit:mm 2 · High gain : ? S21e? =15dB typ (f=1GHz). 2161 · High cutoff frequency : fT=9.0GHz typ. [2SC5503] 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 16 V Collector-to-Emitter Voltage VCEO 8 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 50 mA Collector Dissipation PC Mounted on a ceramic board (250mm2? 0.8mm) 400 mW Junction Temperature Tj 150 ?C Storage Temp
Keywords
2sc5503 Datasheet, Design, MOSFET, Power
2sc5503 RoHS, Compliant, Service, Triacs, Semiconductor
2sc5503 Database, Innovation, IC, Electricity
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