View 2sc5511 datasheet:

2SC5511 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (160V, 1.5A) 2SC5511 Features External dimensions (Units : mm) 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = 160V) 10.0 4.5 3) High fT. (Typ. 150MHz) 3.2 2.8 ? 4) Wide SOA (safe operating area). 5) Complements the 2SA2005. 1.2 1.3 0.8 0.75 2.54 2.54 2.6 (1) Base(Gate) (1) (2) (3) (2) Collector(Drain) Absolute maximum ratings (Ta = 25°C) (1) (2) (3) (3) Emitter(Source) Parameter Symbol Limits Unit ROHM : TO-220FN Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V Collector current IC 1.5 A 2 W Collector power dissipation PC 20 W (Tc = 25°C) Junction temperature T