View 2sc5519 datasheet:

Power Transistors 2SC5519 2SC5519 2SC5519 2SC5519 2SC5519 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 3.0±0.3 For horizontal deflection output ? 3.2±0.1 5? 5? Features • High breakdown voltage, and high reliability through the use of a 5? glass passivation layer 5? • High-speed switching (4.0) 5? 2.0±0.2 • Wide area of safe operation (ASO) 1.1±0.1 0.7±0.1 Absolute Maximum Ratings TC = 25°C 5.45±0.3 10.9±0.5 Parameter Symbol Rating Unit Collector to base voltage VCBO 1 700 V 5? 1 2 3 Collector to emitter voltage VCES 1 700 V 1 : Base 2 : Collector Emitter to base voltage VEBO 7V 3 : Emitter Peak collector current ICP 16 A TOP-3E Package Collector current IC 8A Internal Connection Base current IB 3A C TC = 25°C PC 50 W Collector powe