View 2sc5526 datasheet:

2SC5526 Transistors High-speed Switching Transistor (60V, 12A) 2SC5526 External dimensions (Units: mm) Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.15V at IC / IB = 6A / 0.3A) 10.0 4.5 2) High switching speed. 2.8 3.2 ? (Typ. tf = 0.1µs at Ic = 6A) 3) Wide SOA. (safe operating area) 1.2 1.3 4) Complements the 2SA2007. 0.8 0.75 2.54 2.54 2.6 (1) (2) (3) ( ) (1) (2) (3) (1) Base Gate ( ) (2) Collector Drain Absolute maximum ratings (Ta = 25°C) ( ) ROHM : TO-220FN (3) Emitter Source Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V 12 A(DC) Collector current IC 20 A(Pulse) * 2 W PC Collector power dissipation 25 W(Tc=25°C) Junction temperature Tj 150 °C Storag