View 2sc5531 datasheet:

2SC5531 Transistors High-Voltage Switching Transistor (400V, 2A) 2SC5531 Features External dimensions (Units : mm) 1) Low VCE(sat). VCE(sat)=0.15V (Typ.) 13.1 (IC / IB =1A / 0.2A) 3.2 2) High breakdown voltage. VCEO=400V 3) Fast switching. 8.8 tf ?1.0µs ( ) 1 Base ( ) 2 Collector (IC=0.8A) ( ) 3 Emitter 0.5Min. ROHM : PSD3 EIAJ : SC-83A Structure Three-layer, diffused planar type NPN silicon transistor. Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V IC 2 A(DC) Collector current ICP 4 A(Pulse) * 2 W Collector power dissipation PC 30 W(Tc=25?C) Junction temperature Tj 150 ?C Storage temperature Tstg -55~+150 ?C Single puls