View 2sc5537 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:ENN6340 NPN Epitaxial Planar Silicon Transistor 2SC5537 Low-Voltage, Low-Current High-frequency Amplifier Applications Features Package Dimensions · Low voltage, low current operation : fT=5GHz typ. unit:mm 2 (VCE=1V, IC=1mA) : ? S21e? =7dB typ (f=1GHz). 2159 : NF=2.6dB typ (f=1GHz). [2SC5537] · Ultrasmall, slim flat-lead package. (1.4mm ? 0.8mm ? 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 12 V Collector-to-Emitter Voltage VCEO 6 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 15 mA Collector Dissipation PC 80 mW Junction Temperature Tj 150 ?C Storage Temperature T
Keywords
2sc5537 Datasheet, Design, MOSFET, Power
2sc5537 RoHS, Compliant, Service, Triacs, Semiconductor
2sc5537 Database, Innovation, IC, Electricity
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