View 2sc5539 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:ENN6341 NPN Epitaxial Planar Silicon Transistor 2SC5539 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions · Low noise : NF=1.1dB typ (f=1GHz). unit:mm 2 · High gain : ? S21e? =12dB typ (f=1GHz). 2159 · High cutoff frequency : fT=7.5GHz typ. [2SC5539] · Ultrasmall, slim flat-lead package. (1.4mm ? 0.8mm ? 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 100 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 t
Keywords
2sc5539 Datasheet, Design, MOSFET, Power
2sc5539 RoHS, Compliant, Service, Triacs, Semiconductor
2sc5539 Database, Innovation, IC, Electricity
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