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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc5540

Ordering number:ENN6280 NPN Epitaxial Planar Silicon Transistor 2SC5540 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions · High cutoff frequency : fT=10GHz typ. unit:mm 2 · High gain : ? S21e? =13dB typ (f=1GHz). 2159 · Low noise : NF=1.3dB typ (f=1GHz). [2SC5540] · Small Cob : Cob=0.4pF typ. · Ultrasmall, slim flat-lead package. 1.4 (1.4mm ? 0.8mm ? 0.6mm) 0.1 0.25 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 16 V Collector-to-Emitter Voltage VCEO 8 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 20 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C

Keywords

 2sc5540 Datasheet, Design, MOSFET, Power

 2sc5540 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5540 Database, Innovation, IC, Electricity

 

 
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