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2sc5548a

2SC5548A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications • High speed switching: tr = 0.5 µs (max), t = 0.3 µs (max) (I = 0.8 A) f C • High collector breakdown voltage: V = 400 V CEO • High DC current gain: h = 40 (min) (I = 0.2 A) FE C Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 2 Collector current A Pulse ICP 4 Base current IB 0.5 A JEDEC ? Ta = 25°C 1.0 Collector power PC W JEITA ? dissipation Tc = 25°C 15 TOSHIBA 2-7B1A Junction temperature Tj 150 °C Weight: 0.36 g (typ.) Storage temperature

Keywords

 2sc5548a Datasheet, Design, MOSFET, Power

 2sc5548a RoHS, Compliant, Service, Triacs, Semiconductor

 2sc5548a Database, Innovation, IC, Electricity

 

 
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